R Plane Sapphire Crystal Structure

In all cases zinc blende inn was grown on a substrate with cubic crystal structure.

R plane sapphire crystal structure.

Sapphire substrate r plane r plane sapphire substrates are preferred for the hetero epitaxial deposition of silicon used in microelectronic ic applications. Sapphire is equivalent to corundum alpha al 2 o 3 and may contain only some impurities color centers which generates colors which are not reddish and then called ruby. Fig 2 shows the structure of the primary planes of the sapphire crystal corresponding to the structure system of sapphire. The sapphire corundum structure can be represented by ordering octahedron is shown on fig 1.

Gaas on r plane sapphire has been epitaxially grown by mbe and reported first time to the best of author s knowledge. 3 97 g cm lattice constant. Epitaxial relationship of gaas to r plane and c plane sapphire substrates has been investigated. Improved fabrication processes ensure no subsurface work damage and the exceptionally smooth surface finish and high dielectric constant can make sapphire an excellent choice for hybrid substrates particularly for microwave acs.

Physical properties of sapphire crystal structure hexagonal. A 0 4763 nm c 1 3003 nm standard orientation. 2 379 å 1102 r plane. The basic structure consists of hexagonal close packed planes of oxygen intercalated with aluminum planes.

Sapphire is a single crystal al 2 o 3 with a hexagonal rhombohedral crystal structure. O 2 ions are in tops peaks of the octahedrons and al 3 ions are inside of octahedrons. 1 375 å 1123 n plane. On r plane sapphire the epitaxial formation of 110 oriented cubic fe doped in 2o 3 has been reported 21 without any information on domain structure and in plane orientation whereas co doped in 2o 3 has been reported to form.

Sapphire α al 2 o 3 as a hexagonal structure belonging to the space group r3c can be expressed both as a hexagonal as well as a rhombohedral unit cell. A 4 758 å c 12 992 å crystallographic d spacing 1120 a plane. 1 740 å 1010 m plane.